DESIGN OF FULL ADDERS USING DOUBLE GATE MOSFET

T. Hasritha Lakshmi Chandra Durga , G.Srujani , Ch.Yeliazer , G. Phaneendra Lohith , J. Devi Naga Manikanta, Dr.T.V. Janardhana Rao

Low Power VLSI, MOSFET (DG MOSFET), , Short Channel Effects (SCEs), Drain Induced Barrier Lowering (DIBL), Nano-scale Devices, CMOS Scaling, Ultra-low Power Design.

The need of designing low power VLSI circuits has been increased immenselydue to increased demand of portable devices like Laptops, cellular and mobiles. Further to integrate a greater number of devices on chip, scaling of device size is required. But there are number of problems in scaling of bulk MOSFETS. The problems like leakage current, drain induced barrier lowering (DIBL) effect, and other short channel affects (SCE’s) degrade the performance of circuits. New device structure is needed which can work with improved performance in nano- meter range of operation. A double gate MOSFET is capable device because it shows better scalability in nano circuit. Double Gate MOSFET (DG MOSFET) is widely used in ultra-low power design. This thesis explains the performance analysis of Single Gate and Double Gate MOSFET. This structure not only reduces the count of transistors by 86% but also demonstrates that larger circuits of double gate MOSFETs can be built, bolstering the faith in double gate MOSFET devices as a possible substitute of CMOS devices in a near future.

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" DESIGN OF FULL ADDERS USING DOUBLE GATE MOSFET", IJSDR - International Journal of Scientific Development and Research (www.IJSDR.org), ISSN:2455-2631, Vol.8, Issue 3, page no.1544-1551, March-2023, Available :https://ijsdr.org/papers/IJSDR2303269.pdf

Volume 8 Issue 3, March-2023

Pages : 1544-1551

Paper Reg. ID: IJSDR_308647

Published Paper Id: IJSDR2303269

Downloads: 00070

Research Area: Science and Technology

Country: -, -, India

Published Paper PDF: https://ijsdr.org/papers/IJSDR2303269

Published Paper URL: https://ijsdr.org/viewpaperforall?paper=IJSDR2303269

DOI: https://doi.org/10.56975/ijsdr.v8i3.308647

ISSN: 2455-2631 | IMPACT FACTOR: 9.15 Calculated By Google Scholar | ESTD YEAR: 2016

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 9.15 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

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