A review of surface potential of short channel MOSFETs in subthreshold regime

Swapnadip De , Angsuman Sarkar , Srijan Das

Surface potential, subthreshold, Gauss’s law, channel engineering, gate engineering

In this paper an analytical models of subthreshold surface potential for channel engineered and gate engineered MOSFETs are studied. The models are compared with simulation results from 2D DESSIS. It is seen that the results of the existing models tally with those from 2D DESSIS.

Published Paper   E-Certificate

"A review of surface potential of short channel MOSFETs in subthreshold regime ", IJSDR - International Journal of Scientific Development and Research (www.IJSDR.org), ISSN:2455-2631, Vol.8, Issue 8, page no.204 - 217, August-2023, Available :https://ijsdr.org/papers/IJSDR2308030.pdf

Volume 8 Issue 8, August-2023

Pages : 204 - 217

Paper Reg. ID: IJSDR_208104

Published Paper Id: IJSDR2308030

Downloads: 000347187

Research Area: Electronics & Communication Engg. 

Country: Kolkata, West Bengal, India

Published Paper PDF: https://ijsdr.org/papers/IJSDR2308030

Published Paper URL: https://ijsdr.org/viewpaperforall?paper=IJSDR2308030

ISSN: 2455-2631 | IMPACT FACTOR: 9.15 Calculated By Google Scholar | ESTD YEAR: 2016

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 9.15 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

Publisher: IJSDR(IJ Publication) Janvi Wave

This work is licensed under a Creative Commons Attribution 4.0 International License and The Open Definition