|
INTERNATIONAL JOURNAL OF SCIENTIFIC DEVELOPMENT AND RESEARCH International Peer Reviewed & Refereed Journals, Open Access Journal ISSN Approved Journal No: 2455-2631 | Impact factor: 8.15 | ESTD Year: 2016 open access , Peer-reviewed, and Refereed Journals, Impact factor 8.15 |
Imp Links for Author
Imp Links for Reviewer
Research Area
Subscribe IJSDR
Visitor Counter
Copyright Infringement Claims
Indexing Partner
|
Published Paper Details
|
|
| Paper Title: | Optical and photoluminescence performance of electrodeposited arsenic selenide thin film doped with erbium ion |
| Authors Name: | Dr. Sudhir Kumar Mishra |
| Unique Id: | IJSDR2110015 |
| Published In: | Volume 6 Issue 10, October-2021 |
| Abstract: | The solid state performance of Erbium ion (Er3+), a rare-earth ion, incorporated into the lattice of arsenic selenide (As2Se3) film is here presented. By varying the concentration of the dopant from 1 to 5% (wt.%), the films were deposited on a fluorine-doped SnO2 glass via the electrodeposition method. The structural, optical and morphological characteristics of the samples were obtained using the XRD and Raman spectroscopy, UV-VIS-NIR and photoluminescence spectroscopy and scanning electron microscopy respectively. Polycrystalline films having monoclinic and cubic crystal structures for the undoped and doped samples respectively were observed from the XRD analysis. 34.5 nm and 44.2 nm were estimated for the mean grain size of the undoped and doped films respectively. The Raman spectra revealed the diffusion of the Erbium ion (Er3+) into the As2Se3 lattice by Raman shift. The films revealed least absorbance and high transmittance up to 99% in the IR region with increasing doping. A high refractive index value of 2.66 was observed for all the films with a broadening towards the NIR region. The energy bandgap was estimated and lies in the range of 3.61–3.85 eV which slightly decreased with increasing doping concentration. The PL spectra showed intense excitonic (near-edge) emission bands at 348 nm with increasing doping. SEM micrographs revealed fairly homogeneous nano-ball morphology at lower doping concentration and nanoclusters at higher doping concentration. Annealing of the films above the glass-transition temperature (Tg) allowed the transition of the film to the crystalline phase which is an interesting feature in binary chalcogenide-based phase change memory (PCM) photonics devices. |
| Keywords: | - |
| Cite Article: | "Optical and photoluminescence performance of electrodeposited arsenic selenide thin film doped with erbium ion", International Journal of Science & Engineering Development Research (www.ijsdr.org), ISSN:2455-2631, Vol.6, Issue 10, page no.126 - 135, October-2021, Available :http://www.ijsdr.org/papers/IJSDR2110015.pdf |
| Downloads: | 000337072 |
| Publication Details: | Published Paper ID: IJSDR2110015 Registration ID:201047 Published In: Volume 6 Issue 10, October-2021 DOI (Digital Object Identifier): Page No: 126 - 135 Publisher: IJSDR | www.ijsdr.org ISSN Number: 2455-2631 |
|
Click Here to Download This Article |
|
| Article Preview | |
|
|
|
Major Indexing from www.ijsdr.org
| Google Scholar | ResearcherID Thomson Reuters | Mendeley : reference manager | Academia.edu |
| arXiv.org : cornell university library | Research Gate | CiteSeerX | DOAJ : Directory of Open Access Journals |
| DRJI | Index Copernicus International | Scribd | DocStoc |
Track Paper
Important Links
Conference Proposal
ISSN
 |
 |
DOI (A digital object identifier)
  Providing A digital object identifier by DOI How to GET DOI and Hard Copy Related |
Open Access License Policy
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License
|
 |
 |
 |
Social Media
Indexing Partner |
|||
| Copyright © 2024 - All Rights Reserved - IJSDR | |||
Facebook Twitter Instagram LinkedIn