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ISSN Approved Journal No: 2455-2631 | Impact factor: 8.15 | ESTD Year: 2016
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Paper Title: Magnetic Semiconductors for the Future of VLSI
Authors Name: Shahir Mubarak. M , Greshma Mohan , Ajin Surendran
Unique Id: IJSDR1612035
Published In: Volume 1 Issue 12, December-2016
Abstract: Spin as a property of electron, can be manipulated easily as its charge and is a perfect candidate for modern electronic devices. Charge of electron dissipates quickly unless an external force is constantly applied; on the other hand, spin can remain in its state for long period of time eliminating volatility. In case of magnetic semiconducting devices, materials could provide a new type of control in conduction. Traditional electronics are based on control of charge carriers; practical magnetic semiconductors would also allow control of quantum spin state. Implementation of non-volatile memory elements in logic circuits could bring several advantages such as instant on/off and run time re-configurability. Reduction of power consumption and interconnection delay are the two main targets of VLSI’s. Development of such memory device has potential for exceeding the performance of traditional semiconductor-based memories, and may represent one of the major technologies for the 21st century.
Keywords: Spintronics, Diluted Magnetic Semiconductors, Fluxtronics, VLSI, Spintronics in VLSI, Hybrid Circuits
Cite Article: "Magnetic Semiconductors for the Future of VLSI", International Journal of Science & Engineering Development Research (www.ijsdr.org), ISSN:2455-2631, Vol.1, Issue 12, page no.194 - 198, December-2016, Available :http://www.ijsdr.org/papers/IJSDR1612035.pdf
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Publication Details: Published Paper ID: IJSDR1612035
Registration ID:160999
Published In: Volume 1 Issue 12, December-2016
DOI (Digital Object Identifier):
Page No: 194 - 198
Publisher: IJSDR | www.ijsdr.org
ISSN Number: 2455-2631

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