INTERNATIONAL JOURNAL OF SCIENTIFIC DEVELOPMENT AND RESEARCH International Peer Reviewed & Refereed Journals, Open Access Journal ISSN Approved Journal No: 2455-2631 | Impact factor: 8.15 | ESTD Year: 2016
open access , Peer-reviewed, and Refereed Journals, Impact factor 8.15
Theoretical characterization and band gap tuning of Snx(GeSe2)100-x thin films
Authors Name:
Dr. Sudhir Kumar Mishra
Unique Id:
IJSDR2108021
Published In:
Volume 6 Issue 8, August-2021
Abstract:
The ternary compounds Snx(GeSe2)100-x ((0≤x≤24 at. %) were prepared in glassy thin films. Using the chemical bond approach, theoretical calculations of effects of Sn content on mean coordination number (CN), constraints number (Ns), molar volume (Vm), compactness (δ), heat of atomization (Hs), cohesive energy (CE), overall difference of electronegativity (Δχ) as well as the degree of iconicity (Ion) were discussed. Optical absorbance has been measured in order to evaluate experimentally the band gap (Eg) and the band tail’s width (Ee). In addition, conduction-valence bands positions were estimated when changing Sn content. Increasing Sn content from 0 to 24 at. %, decreases Eg from 2.01 to 1.28 eV. Three theoretical estimations of the variations of the band gap with Sn content were critically compared to experimental values. Obviously, the combination of the estimated band gap from Δχ and contributions of the formed bonds gives the best adjustment.
"Theoretical characterization and band gap tuning of Snx(GeSe2)100-x thin films", International Journal of Science & Engineering Development Research (www.ijsdr.org), ISSN:2455-2631, Vol.6, Issue 8, page no.122 - 131, August-2021, Available :http://www.ijsdr.org/papers/IJSDR2108021.pdf
Downloads:
000337064
Publication Details:
Published Paper ID: IJSDR2108021
Registration ID:201045
Published In: Volume 6 Issue 8, August-2021
DOI (Digital Object Identifier):
Page No: 122 - 131
Publisher: IJSDR | www.ijsdr.org
ISSN Number: 2455-2631
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