Design of a Robust 13T SRAM Bitcell for Operation in Low Voltages
GOKILAPRIYA S
, DR. O.SARANIYA
critical charge, low voltage, radiation hardening, single event upset (SEU), static random access memory (SRAM), linear feedback shift register (LFSR), memory array.
Continuous transistor scaling, coupled with growing demand for low-voltage operation, near the device threshold voltage (VT) increases the susceptibility of VLSI circuits to soft errors, especially when exposed to high radiating environments. The most vulnerable of these circuits are memory arrays that are susceptible to radiation effects than circuits powered at nominal supply voltages. Soft errors like Single Event Upsets (SEUs) occur when an energetic particle hits a sensitive node in a circuit, a transient current pulse generated due to an injected charge, changes the node voltage causing a bit flip in the memory cell. Radiation hardening of such memory blocks is achieved by implementing large bitcells or using Error-Correcting Codes (ECCs). But ECC may entail significant area, performance, and power dissipation penalties. Also, ECC only detects and corrects the error at the time the faulty word is being read, not when it occurs. So, Radiation-Harden-By-Design (RHBD) techniques are targeted at memory cells. The proposed radiation-hardened 13T Static Random Access Memory (SRAM) targeted at low-voltage functionality maintains high soft-error robustness. It employs dual-driven separated-feedback mechanism to tolerate upsets with charge deposits of 500fC. The cell provides better immunity to soft errors when compared to 6T SRAM cell. A 4x4 memory macro was designed and tested using LFSR showing read and write functionality at a scaled voltage of 1V.
"Design of a Robust 13T SRAM Bitcell for Operation in Low Voltages", IJSDR - International Journal of Scientific Development and Research (www.IJSDR.org), ISSN:2455-2631, Vol.2, Issue 3, page no.81 - 87, March-2017, Available :https://ijsdr.org/papers/IJSDR1703014.pdf
Volume 2
Issue 3,
March-2017
Pages : 81 - 87
Paper Reg. ID: IJSDR_170081
Published Paper Id: IJSDR1703014
Downloads: 000347213
Research Area: Engineering
Country: COIMBATORE, TAMILNADU, India
ISSN: 2455-2631 | IMPACT FACTOR: 9.15 Calculated By Google Scholar | ESTD YEAR: 2016
An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 9.15 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator
Publisher: IJSDR(IJ Publication) Janvi Wave
