Design of 2-8 GHz Ultra-Wideband LNA Using 0.18 µm CMOS Technology
Kusuma M S
, Dr Shanthala S
LNA, common gate, wireless sensor networks, UWB, S-parameters, noise figure.
This paper presents a Low Noise Amplifier (LNA) using Common Gate (CG) topology for use in Ultra Wide Band (UWB) Wireless Sensor Networks (WSN). The matching network is composed of series Ls1-Rs1 in series with a parallel Ls2-Rs2 to enhance the bandwidth at the input of the circuit. The high gain (S21) is achieved by using the inductor LC and the peaking inductor LD2. In addition, low NF is achieved. The LNA circuit is implemented using the 0.18µm process and the simulated result of S11 is below -8.0dB while a maximum forward gain (S21) of 18.6dB is achieved. The supply voltage for the LNA is 1.2V and has minimum Noise Figure (NFmin) of 2.649 dB. The output reflection coefficient S22 is below -10dB.
"Design of 2-8 GHz Ultra-Wideband LNA Using 0.18 µm CMOS Technology", IJSDR - International Journal of Scientific Development and Research (www.IJSDR.org), ISSN:2455-2631, Vol.1, Issue 9, page no.24 - 27, September-2016, Available :https://ijsdr.org/papers/IJSDR1609004.pdf
Volume 1
Issue 9,
September-2016
Pages : 24 - 27
Paper Reg. ID: IJSDR_160722
Published Paper Id: IJSDR1609004
Downloads: 000347039
Research Area: Engineering
Country: Bangalore, Karnataka, India
ISSN: 2455-2631 | IMPACT FACTOR: 9.15 Calculated By Google Scholar | ESTD YEAR: 2016
An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 9.15 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator
Publisher: IJSDR(IJ Publication) Janvi Wave
