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IJSDR
INTERNATIONAL JOURNAL OF SCIENTIFIC DEVELOPMENT AND RESEARCH
International Peer Reviewed & Refereed Journals, Open Access Journal
ISSN Approved Journal No: 2455-2631 | Impact factor: 8.15 | ESTD Year: 2016
open access , Peer-reviewed, and Refereed Journals, Impact factor 8.15

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Volume 9 | Issue 3

Impact factor: 8.15

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Paper Title: Design of 2-8 GHz Ultra-Wideband LNA Using 0.18 µm CMOS Technology
Authors Name: Kusuma M S , Dr Shanthala S
Unique Id: IJSDR1609004
Published In: Volume 1 Issue 9, September-2016
Abstract: This paper presents a Low Noise Amplifier (LNA) using Common Gate (CG) topology for use in Ultra Wide Band (UWB) Wireless Sensor Networks (WSN). The matching network is composed of series Ls1-Rs1 in series with a parallel Ls2-Rs2 to enhance the bandwidth at the input of the circuit. The high gain (S21) is achieved by using the inductor LC and the peaking inductor LD2. In addition, low NF is achieved. The LNA circuit is implemented using the 0.18µm process and the simulated result of S11 is below -8.0dB while a maximum forward gain (S21) of 18.6dB is achieved. The supply voltage for the LNA is 1.2V and has minimum Noise Figure (NFmin) of 2.649 dB. The output reflection coefficient S22 is below -10dB.
Keywords: LNA, common gate, wireless sensor networks, UWB, S-parameters, noise figure.
Cite Article: "Design of 2-8 GHz Ultra-Wideband LNA Using 0.18 µm CMOS Technology", International Journal of Science & Engineering Development Research (www.ijsdr.org), ISSN:2455-2631, Vol.1, Issue 9, page no.24 - 27, September-2016, Available :http://www.ijsdr.org/papers/IJSDR1609004.pdf
Downloads: 000336256
Publication Details: Published Paper ID: IJSDR1609004
Registration ID:160722
Published In: Volume 1 Issue 9, September-2016
DOI (Digital Object Identifier):
Page No: 24 - 27
Publisher: IJSDR | www.ijsdr.org
ISSN Number: 2455-2631

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