INTERNATIONAL JOURNAL OF SCIENTIFIC DEVELOPMENT AND RESEARCH International Peer Reviewed & Refereed Journals, Open Access Journal ISSN Approved Journal No: 2455-2631 | Impact factor: 8.15 | ESTD Year: 2016
open access , Peer-reviewed, and Refereed Journals, Impact factor 8.15
Design and Simulation of Junctionless Double Gate Graphene FET
Authors Name:
N. Sai kiran
, K. Jeevan Reddy
Unique Id:
IJSDR1611010
Published In:
Volume 1 Issue 11, November-2016
Abstract:
This paper presents the design and simulation of junctionless double gate graphene FET. This design uses the new materials which have high K. Without suffering serious short channel effects, the designed JL DG graphene device shows excellent characteristics. The designed device shows reduced leakage current, Small SS, high ION/IOFF. The results obtained show the improvement in the transistor performance for certain parameters.
"Design and Simulation of Junctionless Double Gate Graphene FET", International Journal of Science & Engineering Development Research (www.ijsdr.org), ISSN:2455-2631, Vol.1, Issue 11, page no.57 - 61, November-2016, Available :http://www.ijsdr.org/papers/IJSDR1611010.pdf
Downloads:
000336257
Publication Details:
Published Paper ID: IJSDR1611010
Registration ID:160928
Published In: Volume 1 Issue 11, November-2016
DOI (Digital Object Identifier):
Page No: 57 - 61
Publisher: IJSDR | www.ijsdr.org
ISSN Number: 2455-2631
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