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INTERNATIONAL JOURNAL OF SCIENTIFIC DEVELOPMENT AND RESEARCH International Peer Reviewed & Refereed Journals, Open Access Journal ISSN Approved Journal No: 2455-2631 | Impact factor: 8.15 | ESTD Year: 2016 open access , Peer-reviewed, and Refereed Journals, Impact factor 8.15 |
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| Paper Title: | Modelling of LDMOS Transistor |
| Authors Name: | D.SAI.CHAITANYA , K.JEEVAN REDDY |
| Unique Id: | IJSDR1610048 |
| Published In: | Volume 1 Issue 10, October-2016 |
| Abstract: | LDMOS is extensively used in high power applications as it offers better performance and it can be easily manufactured with existing CMOS technology with slight modifications, hence in this paper we present a model of LDMOS transistor which includes the resistive drift region incorporated in the existing MM20 mosfet model and by varying the resistive drift region lengths and gate oxide material changes in the device characteristics are obtained and these values are compared to find the best gate oxide and resistive drift lengths |
| Keywords: | Compact model, drift region, resistive region, High voltage MOSFET. |
| Cite Article: | "Modelling of LDMOS Transistor ", International Journal of Science & Engineering Development Research (www.ijsdr.org), ISSN:2455-2631, Vol.1, Issue 10, page no.283 - 286, October-2016, Available :http://www.ijsdr.org/papers/IJSDR1610048.pdf |
| Downloads: | 000337070 |
| Publication Details: | Published Paper ID: IJSDR1610048 Registration ID:160907 Published In: Volume 1 Issue 10, October-2016 DOI (Digital Object Identifier): Page No: 283 - 286 Publisher: IJSDR | www.ijsdr.org ISSN Number: 2455-2631 |
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